FQD11P06

The FQD11P06 is a P-Channel enhancement mode power MOSFET manufactured by On Semiconductor, utilizing proprietary planar stripe and DMOS technology. This advanced technology is optimized to minimize on-state resistance and provide superior switching performance, making it suitable for applications requiring high energy pulse handling in avalanche and commutation modes.

Key electrical specifications include a drain-source breakdown voltage of -60V and a continuous drain current of -9.4A at 25°C. The on-state resistance (RDS(on)) is 0.185 Ohms at a gate-source voltage of -10V. It also features low gate charge (typical 13 nC) and low Crss (typical 45 pF), contributing to fast switching speeds.

This MOSFET is well-suited for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching for power management in portable and battery-operated products. The device is available in a surface-mount DPAK package.

Absolute maximum ratings include a continuous drain current of -5.95A at 100°C, a pulsed drain current of -37.6A, and a gate-source voltage range of ±30V. Thermal characteristics include a junction-to-case thermal resistance of 3.28 °C/W and a junction-to-ambient thermal resistance of 50 °C/W when mounted on a minimum recommended PCB pad.