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FQD10N20LTM N-Channel MOSFET from On Semiconductor with 200V drain-source voltage rating and 7.6A continuous drain current. Surface mount package in TO-252 (DPak).
Mfr Part #:

FQD10N20LTM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET from On Semiconductor with 200V drain-source voltage rating and 7.6A continuous drain current. Surface mount package in TO-252 (DPak).
✓ Total Stock: 213,706 pcs
$ Price Range: $0.77 - $0.86

FQD10N20LTM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Romaks Technologies ✓
Non-Authorised Inventory information
212,706 pcs
On Request
212706 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD10N20LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQD10N20LTM Description

Short technical summary and product information.

The FQD10N20LTM is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage power switching applications.

 

Key electrical characteristics include a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7.6A at case temperature. The maximum on-resistance (Rds(on)) is 360 mOhm at a drain current of 3.8A and gate-source voltage of 10V. The gate threshold voltage is 2V maximum at 250µA drain current.

 

The device features a total gate charge of 17 nC at 5V gate drive, and an input capacitance of 830 pF at 25V drain-source voltage. Recommended drive voltages are 5V and 10V for minimum and maximum on-resistance operation. Maximum gate-source voltage rating is ±20V.

 

Packaged in a TO-252-3 (DPak) surface mount package with a D-Pak supplier device package designation. The operating junction temperature range is from -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 51W at case temperature.

FQD10N20LTM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQD10N20LTM: N-Channel MOSFET, 200V, 7.6A, TO-252
Subcategory: Transistors - FETs, MOSFETs - Single

FQD10N20LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD10N20LTM Estimated Pricing

Qty Low High
1+ $0.86 $0.86
10+ $0.77 $0.77

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQD10N20LTM Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 7.6A.
  • Low on-resistance of 360mOhm at 3.8A.
  • Surface mount package in TO-252 (DPak).
  • Operating temperature range from -55°C to 150°C.

FQD10N20LTM Applications

  • Power switching in AC-DC and DC-DC converters.
  • Motor drive and actuator control circuits.
  • Load switching in automotive and industrial systems.
  • High-voltage power management in electronic devices.

FQD10N20LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

200V.

What is the package type of FQD10N20LTM?

TO-252-3, DPak (2 Leads + Tab), SC-63 (D-Pak).

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQD10N20LTM RoHS compliant?

The available data indicates RoHS3 compliance, but this has not been verified by the manufacturer.

What is the on-resistance of the FQD10N20LTM?

Maximum 360 mOhm at 3.8A drain current and 10V gate-source voltage.

What is the total gate charge of this MOSFET?

17 nC at 5V gate-source voltage (maximum).

What gate drive voltage is recommended?

5V and 10V for achieving minimum and maximum on-resistance.

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