| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,245 pcs
|
5245 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,920 pcs
|
1920 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQD10N20LTF is an N-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications requiring a 200V drain-source breakdown voltage and a continuous drain current of 7.6A at case temperature (Tc). The device features a maximum on-resistance (Rds(on)) of 360 milliohms at a gate-source voltage of 10V and a drain current of 3.8A, enabling low conduction losses.
This MOSFET is housed in a TO-252 (DPAK) surface-mount package, also known as SC-63, which offers a compact footprint suitable for automated assembly. The device supports a gate-source voltage range of ±20V and has a typical gate threshold voltage (Vgs(th)) of 2V maximum at a drain current of 250µA. Input capacitance is specified at 830pF maximum at Vds=25V, and total gate charge is 17nC maximum at Vgs=5V, allowing for moderate switching speeds.
The FQD10N20LTF is suitable for a variety of power management circuits including DC-DC converters, load switches, and motor control applications. Its operating junction temperature range spans from -55°C to +150°C, ensuring reliable performance in demanding thermal environments. The device is RoHS compliant and has a moisture sensitivity level (MSL) of 1 (unlimited), simplifying handling and storage requirements.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 7.6A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 360mΩ at Vgs=10V and Id=3.8A.
The device is available in a TO-252 (DPAK) surface-mount package, also known as SC-63.
The operating junction temperature range is -55°C to +150°C.
The device is listed as RoHS3 compliant, though this is unverified and should be confirmed with official documentation.
The maximum gate threshold voltage (Vgs(th)) is 2V at a drain current of 250µA.