DistyParts Icon
FQD10N20CTM N-Channel MOSFET with 200V drain-source voltage and 7.8A continuous drain current. Surface mount in DPAK package.
Mfr Part #:

FQD10N20CTM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 200V drain-source voltage and 7.8A continuous drain current. Surface mount in DPAK package.
✓ Total Stock: 20,957 pcs

FQD10N20CTM Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
12,993 pcs
On Request
12993 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,945 pcs
On Request
7945 pcs On Request 1 On Request On Request 11+ On Request On Request
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
19 pcs
On Request
19 pcs On Request 1 On Request On Request 1k11P// On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQD10N20CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQD10N20CTM Description

Short technical summary and product information.

The FQD10N20CTM is an N-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current of 7.8A at case temperature (Tc). The device has a maximum on-resistance (Rds(on)) of 360 mOhm at a gate-source voltage of 10V and drain current of 3.9A. The gate threshold voltage (Vgs(th)) is 4V maximum at 250µA drain current. Gate charge (Qg) is 26 nC maximum at 10V, and input capacitance (Ciss) is 510 pF maximum at 25V drain-source voltage. Maximum power dissipation is 50W at case temperature. The operating junction temperature range is -55°C to 150°C. The MOSFET is offered in a surface-mount TO-252-3 (DPak) package, suitable for automated assembly. Typical applications include power management, DC-DC converters, and motor control circuits.

FQD10N20CTM Quick Information

Product Type: N-Channel MOSFET
Canonical Name: FQD10N20CTM N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQD10N20CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQD10N20CTM Features

  • N-Channel MOSFET with 200V drain-source rating.
  • Continuous drain current of 7.8A.
  • Low on-resistance of 360 mOhm.
  • Surface mount DPAK package.
  • Operating temperature range -55°C to 150°C.

FQD10N20CTM Applications

  • Suitable for power management circuits.
  • Used in DC-DC converter applications.
  • Ideal for motor control systems.
  • Applicable in switching power supplies.

FQD10N20CTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200V.

What is the continuous drain current?

7.8A at case temperature (Tc).

What is the on-resistance?

360 mOhm maximum at 3.9A drain current and 10V gate-source voltage.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is available?

TO-252-3 (DPak) surface mount package.

Is the device RoHS compliant?

RoHS3 Compliant (unverified).

What is the gate charge?

26 nC maximum at 10V gate-source voltage.

Home
Account

Categories