FQB9P25TM FQB9P25TM is a P-Channel MOSFET from ON Semiconductor with 250V drain-source breakdown voltage and 9.4A continuous drain current. It features a low on-resistance of 620mOhm at 10V gate drive and is housed in a D²PAK (TO-263) surface mount package.
Mfr Part #:

FQB9P25TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQB9P25TM is a P-Channel MOSFET from ON Semiconductor with 250V drain-source breakdown voltage and 9.4A continuous drain current. It features a low on-resistance of 620mOhm at 10V gate drive and is housed in a D²PAK (TO-263) surface mount package.
✓ Total Stock: 490 pcs

FQB9P25TM Available from 1 distributor

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FQB9P25TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB9P25TM Description

Short technical summary and product information.

The FQB9P25TM is a P-Channel enhancement mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring a drain-source voltage rating of 250V and a continuous drain current of 9.4A at a case temperature of 25°C. The device features a maximum on-resistance of 620mOhm when driven with a 10V gate-source voltage, ensuring efficient power handling. The gate threshold voltage is a maximum of 5V at 250µA drain current, and the maximum gate-source voltage is ±30V. The MOSFET has a total gate charge of 38nC at 10V and an input capacitance of 1180pF at 25V drain-source voltage, making it suitable for moderate frequency switching applications. The device is capable of dissipating up to 120W at the case temperature of 25°C, with a maximum junction temperature range of -55°C to 150°C. The FQB9P25TM is offered in a D²PAK (TO-263) surface mount package, which provides excellent thermal performance and is suitable for automated assembly processes. This package is also known as TO-263-3 or D²Pak with 2 leads and tab. The part is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include power management circuits, DC-DC converters, and motor control systems where high voltage and moderate current switching is required.

FQB9P25TM Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 250V, 9.4A, D²PAK (TO-263)
Subcategory: P-Channel MOSFET

FQB9P25TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB9P25TM Features

  • P-Channel MOSFET with 250V drain-source voltage.
  • Continuous drain current rating of 9.4A.
  • Low on-resistance of 620mOhm at 10V.
  • Surface mount D²PAK (TO-263) package.
  • RoHS3 compliant and MSL Level 1.

FQB9P25TM Applications

  • Used in high-voltage DC-DC converters.
  • Suitable for power management in industrial systems.
  • Ideal for motor control applications.
  • Applicable in battery protection circuits.

FQB9P25TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQB9P25TM?

The drain-source breakdown voltage is 250V (minimum).

What is the maximum continuous drain current?

The maximum continuous drain current is 9.4A at a case temperature of 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 620mOhm at Vgs=10V and Id=4.7A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package is the FQB9P25TM available in?

It is available in a D²PAK (TO-263) surface mount package, also known as TO-263-3 or D²Pak with 2 leads and tab.

Is the FQB9P25TM RoHS compliant?

Yes, it is RoHS3 compliant.

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