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FQB8P10TM The FQB8P10TM is a P-Channel power MOSFET from On Semiconductor. It features a 100V drain-source breakdown voltage and 8A continuous drain current.
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FQB8P10TM

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Mfr Name: On Semiconductor
On Semiconductor
The FQB8P10TM is a P-Channel power MOSFET from On Semiconductor. It features a 100V drain-source breakdown voltage and 8A continuous drain current.
✓ Total Stock: 517 pcs

FQB8P10TM Available from 1 distributor

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FQB8P10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB8P10TM Description

Short technical summary and product information.

The FQB8P10TM is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It is designed for high-efficiency power management applications requiring a P-Channel switch. The device offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 8A at case temperature (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds on) of 530mOhm at a gate drive of 10V and 4A drain current. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA drain current. The device has a total gate charge (Qg) of 15nC at 10V and an input capacitance (Ciss) of 470pF at 25V drain-source voltage. Maximum power dissipation is 65W at case temperature and 3.75W at ambient temperature.

 

The FQB8P10TM is housed in a TO-263-3 (D2PAK) surface mount package, which is suitable for automated assembly processes. The operating junction temperature range is -55°C to 175°C.

FQB8P10TM Quick Information

Product Type: MOSFET
Canonical Name: FQB8P10TM P-Channel Power MOSFET
Subcategory: Power MOSFET

FQB8P10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB8P10TM Features

  • P-Channel power MOSFET for high-side switching.
  • 100V drain-source breakdown voltage rating.
  • 8A continuous drain current at case temperature.
  • 530mOhm maximum on-resistance at 10V gate drive.
  • Surface mount D2PAK (TO-263) package.

FQB8P10TM Applications

  • Suitable for high-side load switching circuits.
  • Used in power management and DC-DC converter designs.
  • Applicable for motor control and solenoid drive circuits.
  • Ideal for battery protection and power distribution.

FQB8P10TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQB8P10TM?

The drain-source breakdown voltage (Vdss) is 100V.

What is the continuous drain current rating of the FQB8P10TM?

The continuous drain current (Id) is 8A at case temperature (Tc).

What is the on-resistance of the FQB8P10TM?

The maximum on-resistance (Rds on) is 530mOhm at a gate-source voltage of 10V and drain current of 4A.

What is the operating temperature range of the FQB8P10TM?

The operating junction temperature range is -55°C to 175°C.

What package does the FQB8P10TM come in?

The FQB8P10TM is available in a TO-263-3 (D2PAK) surface mount package.

What is the gate threshold voltage of the FQB8P10TM?

The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.

What is the maximum power dissipation of the FQB8P10TM?

The maximum power dissipation is 65W at case temperature (Tc) and 3.75W at ambient temperature (Ta).

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