| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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75,200 pcs
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75200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQB8N90CTM is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications such as power supplies, inverters, and motor control. It has a maximum drain-source voltage of 900V and a continuous drain current rating of 6.3A at case temperature.
Key electrical characteristics include a maximum on-resistance of 1.9 Ohm at 10V gate drive, a gate charge of 45 nC, and an input capacitance of 2080 pF. The device can dissipate up to 171W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a surface-mount D2PAK (TO-263) package with three leads and a tab for thermal management. It is RoHS3 compliant and has an MSL rating of 1 (unlimited).
900V.
6.3A at case temperature.
TO-263-3, D2PAK (2 leads + tab).
-55°C to 150°C (junction).
Yes, RoHS3 compliant (unverified).
45 nC at 10V.
2080 pF at 25V.