Mfr Part #:

FQB8N60CTM

Name: FQB8N60CTM
Brand: On Semiconductor
SKU: FQB8N60CTM
Availability: InStock

Mfr Name: On Semiconductor

Description:

POWER FIELD-EFFECT TRANSISTOR, 7

✓ Total Stock: 131,771 pcs

FQB8N60CTM Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	971 pcs On Request	971 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	130,800 pcs On Request	130800 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

Short technical summary and product information.

POWER FIELD-EFFECT TRANSISTOR, 7

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

FQB8N60CTM-WS

On Semiconductor

MOSFET N-CH 600V 7.5A D2PAK

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	7.5A (Tc)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	3.13W (Ta), 147W (Tc)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 3.75A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30V
Vgs(th) (Max) @ Id	4V @ 250µA