| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130,800 pcs
|
130800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
971 pcs
|
971 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB8N60CTM is an N-Channel enhancement-mode power MOSFET manufactured by onsemi. It is designed for high-voltage switching applications, with a maximum drain-to-source voltage of 600V and a continuous drain current rating of 7.5A at case temperature (Tc). The device uses metal-oxide semiconductor (MOSFET) technology and is housed in a TO-263-3 (D2PAK) surface-mount package.
Key electrical characteristics include a maximum on-resistance of 1.2Ω at a gate-to-source voltage of 10V and drain current of 3.75A. The gate threshold voltage is 4V maximum at 250µA drain current. The device can handle a maximum gate charge of 36nC at 10V and has an input capacitance of 1255pF at 25V drain-source voltage. Maximum gate-to-source voltage is ±30V.
Thermal specifications include a maximum power dissipation of 147W at case temperature (Tc) and 3.13W at ambient temperature (Ta). The operating junction temperature range is -55°C to 150°C. The device is suitable for power supply, motor control, and other high-voltage switching applications where efficient power handling is required.
The FQB8N60CTM is supplied in a surface-mount D2PAK (TO-263) package, which provides good thermal performance for power dissipation. The package is designed for automated assembly and is suitable for high-volume manufacturing.
The maximum drain-to-source voltage (Vdss) is 600V.
The continuous drain current (Id) is 7.5A at case temperature (Tc).
The maximum on-resistance (Rds on) is 1.2Ω at Id = 3.75A and Vgs = 10V.
The operating junction temperature range is -55°C to 150°C.
The device is available in a TO-263-3 (D2PAK) surface-mount package.
Maximum power dissipation is 147W at case temperature (Tc) and 3.13W at ambient temperature (Ta).
The maximum gate threshold voltage (Vgs(th)) is 4V at Id = 250µA.