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FQB7P20TM P-Channel MOSFET from ON Semiconductor with 200V drain-source voltage and 7.3A continuous drain current. Surface mount in D2PAK (TO-263) package.
Mfr Part #:

FQB7P20TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
P-Channel MOSFET from ON Semiconductor with 200V drain-source voltage and 7.3A continuous drain current. Surface mount in D2PAK (TO-263) package.
✓ Total Stock: 50,575 pcs

FQB7P20TM Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
50,400 pcs
On Request
50400 pcs On Request 1 On Request On Request On Request On Request On Request
Braun Electronic Components ✓
Non-Authorised Inventory information
175 pcs
On Request
175 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQB7P20TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB7P20TM Description

Short technical summary and product information.

The FQB7P20TM is a P-Channel MOSFET manufactured by ON Semiconductor. It features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7.3A at 25°C case temperature. The on-resistance (Rds(on)) is 690 mOhm maximum at a gate-source voltage of 10V and drain current of 3.65A. The gate threshold voltage (Vgs(th)) is 5V maximum at 250µA. Total gate charge (Qg) is 25 nC maximum at 10V, and input capacitance (Ciss) is 770 pF maximum at Vds = 25V. Power dissipation is rated at 90W maximum at case temperature (Tc) and 3.13W at ambient temperature (Ta). The device operates over a junction temperature range of -55°C to 150°C. It is offered in a surface mount D²PAK (TO-263) package, suitable for automated assembly. The part is listed as RoHS3 compliant, though this status is unverified.

FQB7P20TM Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 200V Vdss, 7.3A Id, D2PAK (TO-263)
Subcategory: Single MOSFET

FQB7P20TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB7P20TM Features

  • P-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current rating of 7.3A.
  • Low on-resistance of 690 mOhm at 10V.
  • Surface mount D2PAK (TO-263) package.
  • Operating temperature range -55°C to 150°C.

FQB7P20TM Applications

  • High-voltage switching in power supplies.
  • Power management in industrial equipment.
  • DC-DC converter applications.
  • Motor control circuits.

FQB7P20TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

200V.

What package is the FQB7P20TM available in?

Surface mount D2PAK (TO-263) package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQB7P20TM RoHS compliant?

RoHS3 compliant (unverified).

What is the gate threshold voltage?

5V max at 250µA.

What is the on-resistance?

690 mOhm max at 3.65A, 10V.

What is the total gate charge?

25 nC max at 10V.

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