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FQB7N60TM The FQB7N60TM is an N-Channel power MOSFET from onsemi, rated for 600V drain-source voltage and 7.4A continuous drain current. It features a low on-resistance of 1Ω and comes in a D2PAK surface-mount package.
Mfr Part #:

FQB7N60TM

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQB7N60TM is an N-Channel power MOSFET from onsemi, rated for 600V drain-source voltage and 7.4A continuous drain current. It features a low on-resistance of 1Ω and comes in a D2PAK surface-mount package.
✓ Total Stock: 2,942 pcs

FQB7N60TM Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,600 pcs
On Request
1600 pcs On Request 1 On Request On Request 11+ On Request On Request
Flip Electronics ✓
Non-Authorised Inventory information
1,342 pcs
On Request
1342 pcs On Request 1 On Request On Request On Request On Request On Request
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FQB7N60TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB7N60TM Description

Short technical summary and product information.

The FQB7N60TM is an N-Channel enhancement-mode power MOSFET manufactured by onsemi using their proprietary planar stripe and DMOS technology. This device is designed to deliver low on-state resistance and superior switching performance, making it suitable for a variety of power conversion applications.

 

Key electrical specifications include a drain-source voltage rating of 600V, continuous drain current of 7.4A at 25°C case temperature (4.7A at 100°C), and a maximum on-resistance of 1Ω at VGS=10V and ID=3.7A. The device also features a low gate charge of 38nC (max) and input capacitance of 1430pF (max), contributing to efficient switching behavior.

 

The FQB7N60TM is offered in a TO-263-3 (D2PAK) surface-mount package, suitable for automated assembly. It is rated for operation over a junction temperature range of -55°C to 150°C and can dissipate up to 142W at 25°C case temperature. The device is 100% avalanche tested, ensuring robustness in applications with inductive loads.

FQB7N60TM Quick Information

Product Type: Power MOSFET
Canonical Name: N-Channel Power MOSFET, 600V, 7.4A, D2PAK
Subcategory: Single N-Channel

FQB7N60TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

FQB7N60TM Features

  • 600V drain-source voltage rating.
  • 7.4A continuous drain current.
  • Low on-resistance of 1Ω max.
  • 100% avalanche tested for reliability.
  • RoHS compliant and halogen-free.

FQB7N60TM Applications

  • Switched mode power supplies (SMPS).
  • Active power factor correction (PFC).
  • Electronic lamp ballasts.
  • High-voltage DC-DC converters.

FQB7N60TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQB7N60TM?

The maximum drain-source voltage (Vdss) is 600V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 7.4A at Tc=25°C, and 4.7A at Tc=100°C.

What is the maximum on-resistance (Rds(on))?

The maximum on-resistance is 1Ω at Vgs=10V and Id=3.7A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the FQB7N60TM RoHS compliant?

The datasheet states the device is Pb-Free, Halide Free, and RoHS Compliant, but this is unverified from an external source.

What is the package type of the FQB7N60TM?

The device is available in a TO-263-3 (D2PAK) surface-mount package.

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