| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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738 pcs
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738 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQB7N10LTM is an N-Channel enhancement mode power MOSFET fabricated with Fairchild's proprietary planar stripe DMOS technology. It is rated for 100V drain-source voltage and supports 7.3A continuous drain current at TC=25°C, with 5.15A at TC=100°C and 29.2A pulsed drain current. The device features a maximum on-state resistance of 350mΩ at VGS=10V and ID=3.65A, a low typical gate charge of 4.6nC, and low reverse transfer capacitance of 12pF, enabling fast switching and efficient operation.
The MOSFET is designed for low voltage applications such as high efficiency switching DC/DC converters and DC motor control. It offers 100% avalanche testing, improved dv/dt capability, and a maximum junction temperature rating of 175°C. Power dissipation is 40W at TC=25°C and 3.75W at TA=25°C when mounted on the minimum pad size. Thermal resistance junction-to-case is 3.75°C/W and junction-to-ambient is 40°C/W (PCB mount).
The device is available in a TO-263-3 (D²PAK) surface mount package, suitable for automated assembly. Operating temperature range is -55°C to +175°C. This component is intended for switching power supplies, motor drives, and other power management circuits requiring logic-level gate drive.
The maximum drain-source voltage (VDSS) is 100V.
The continuous drain current is 7.3A at TC=25°C.
The maximum on-state resistance is 350mΩ at VGS=10V and ID=3.65A.
The operating junction temperature range is -55°C to +175°C.
It is available in TO-263-3 (D²PAK) surface mount package.
According to existing data, it is RoHS3 compliant, but this is unverified.
The gate-source voltage rating is ±20V.