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FQB6N80TM N-Channel MOSFET rated for 800V drain-source voltage and 5.8A continuous drain current. Offered in a D2PAK surface-mount package.
Mfr Part #:

FQB6N80TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 800V drain-source voltage and 5.8A continuous drain current. Offered in a D2PAK surface-mount package.
✓ Total Stock: 11,200 pcs

FQB6N80TM Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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11,200 pcs
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FQB6N80TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB6N80TM Description

Short technical summary and product information.

The FQB6N80TM is an N-Channel power MOSFET from On Semiconductor, featuring a drain-source voltage rating of 800V and a continuous drain current of 5.8A. This device utilizes advanced MOSFET technology to deliver efficient switching performance.

 

With a maximum on-resistance of 1.95 Ohms at 2.9A and 10V gate drive, the FQB6N80TM ensures low conduction losses. The gate charge is specified at 31 nC typical at 10V, enabling fast switching transitions.

 

The input capacitance is 1500 pF at 25V drain-source, and the gate threshold voltage is a maximum of 5V at 250µA. These characteristics make it suitable for high-voltage switching applications.

 

The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It can dissipate up to 158W at the case temperature and operates over a junction temperature range of -55°C to 150°C.

FQB6N80TM Quick Information

Product Type: N-Channel MOSFET (Metal Oxide)
Series: QFET
Canonical Name: N-Channel MOSFET, 800V, 5.8A, D2PAK (TO-263)
Subcategory: Transistors - FETs, MOSFETs - Single

FQB6N80TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQB6N80TM Features

  • N-Channel MOSFET with 800V drain-source voltage.
  • Continuous drain current rating of 5.8 amps.
  • Low on-resistance of 1.95 ohms maximum.
  • Gate charge of 31 nC for efficient switching.
  • Surface mount D2PAK (TO-263) package.

FQB6N80TM Applications

  • Suitable for high-voltage DC-DC converters.
  • Ideal for switch mode power supplies.
  • Used in power factor correction circuits.
  • Applicable in motor drive inverters.

FQB6N80TM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of FQB6N80TM?

800 V.

What package is the FQB6N80TM available in?

D2PAK (TO-263) surface-mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the FQB6N80TM RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the on-resistance (Rds(on)) of the FQB6N80TM?

1.95 Ohm max at 2.9A, 10V.

What is the gate charge of this MOSFET?

31 nC max at 10V.

What is the input capacitance?

1500 pF max at 25V drain-source.

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