| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,950 pcs
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1950 pcs | On Request | 1 | On Request | On Request | 0542+ | On Request | On Request |
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The FQB6N60TM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor (originally Fairchild Semiconductor). It is designed for high efficiency switch mode power supplies and features a drain-source voltage rating of 600V and a continuous drain current of 6.2A at 25°C case temperature. The device utilizes planar stripe DMOS technology to minimize on-state resistance, with a maximum Rds(on) of 1.5 Ohm at VGS=10V.
Key electrical characteristics include a typical gate charge of 20 nC, low input capacitance of 1000 pF, and fast switching performance. The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 440 mJ. It also features improved dv/dt capability with a peak diode recovery dv/dt of 4.5 V/ns.
The device is available in a D2PAK (TO-263) surface mount package, which is suitable for automated assembly. The operating junction temperature range is -55°C to 150°C. The thermal resistance junction-to-case is 0.96°C/W, and junction-to-ambient is 40°C/W when mounted on a minimum pad size PCB.
This MOSFET is RoHS compliant and suitable for applications such as switch mode power supplies, power factor correction circuits, and other high voltage switching applications.
The drain-source voltage (Vdss) is 600 V.
The FQB6N60TM is available in a D2PAK (TO-263) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, the FQB6N60TM is RoHS compliant as per the datasheet.
The continuous drain current is 6.2 A at Tc=25°C and 3.9 A at Tc=100°C.
The maximum on-resistance is 1.5 Ohm at VGS=10V and ID=3.1A.
The typical gate charge is 20 nC at VGS=10V.