| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
33,600 pcs
|
33600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape Width | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's planar stripe and DMOS technology. It is designed for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Key electrical specifications include a maximum drain-source voltage of 600V, continuous drain current of 4.5A at 25°C (2.6A at 100°C), pulsed drain current of 18A, and a maximum on-resistance of 2.5 Ohm at 10V gate drive. Gate charge is 19 nC maximum, input capacitance is 670 pF maximum, and single pulsed avalanche energy is 210 mJ.
The device is rated for a maximum power dissipation of 100W at 25°C case temperature, with a junction-to-case thermal resistance of 1.25°C/W. Operating and storage temperature range is -55 to +150°C.
The MOSFET is available in a D2PAK (TO-263) surface mount package, supplied in tape and reel packaging with 800 units per reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.97 | $0.97 |
| 200+ | $0.37 | $0.37 |
| 500+ | $0.36 | $0.36 |
| 800+ | $0.36 | $0.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 600V.
It is available in a D2PAK (TO-263) surface mount package.
The operating and storage temperature range is -55 to +150°C.
The device is listed as RoHS3 compliant, but this status is unverified.
The maximum on-resistance is 2.5 Ohm at Id=2.25A, Vgs=10V.
The continuous drain current is 4.5A at case temperature 25°C.
The maximum gate charge is 19 nC at Vgs=10V.