Mfr Part #:

FQB5N50CTM

Single N-Channel MOSFET rated for 500V drain-source voltage and 5A continuous drain current. Features low on-resistance of 1.4 Ohm and surface mount D²PAK (TO-263) package.

✓ Total Stock: 641 pcs

FQB5N50CTM Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	393 pcs On Request	393 pcs	On Request	1	On Request	On Request	0802+	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	248 pcs On Request	248 pcs	On Request	1	On Request	On Request	1630	On Request	On Request

FQB5N50CTM Description

Short technical summary and product information.

The FQB5N50CTM is an N-Channel MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 5A at case temperature (Tc). With a maximum drain-source on-resistance of 1.4 Ohm at 2.5A and 10V gate drive, it offers efficient power handling. The device can dissipate up to 73W at Tc and operates over a junction temperature range of -55°C to 150°C.

The MOSFET utilizes standard metal-oxide semiconductor technology and requires a recommended gate drive voltage of 10V for optimal Rds(on). Its gate threshold voltage is typically 4V at 250µA drain current. Input capacitance is 625 pF at 25V Vds, and total gate charge is 24 nC at 10V Vgs, enabling moderate switching speeds.

The FQB5N50CTM is housed in a surface-mount TO-263-3 (D²Pak) package, providing good thermal performance and ease of assembly. It is RoHS3 compliant and has an MSL rating of 1 (unlimited). Typical applications include switch-mode power supplies, power inverters, and motor control circuits where high voltage and moderate current are required.

FQB5N50CTM Quick Information

Product Type: Single MOSFET

Series: QFET

Canonical Name: Single N-Channel MOSFET, 500V, 5A, TO-263

Subcategory: N-Channel MOSFET

FQB5N50CTM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQB5N50CTM Features

N-Channel MOSFET, 500V drain-source voltage.
Continuous drain current of 5A at case temperature.
Low on-resistance: 1.4 Ohm typical at 10V gate drive.
Surface mount TO-263 (D²Pak) package.
RoHS3 compliant and MSL level 1.

FQB5N50CTM Applications

Used in switch-mode power supplies (SMPS).
Suitable for power inverters and converters.
Ideal for motor control and driver circuits.
Applicable in high-voltage DC-DC converters.

FQB5N50CTM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQB5N50CTM?

500 V.

What package is the FQB5N50CTM available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (supplier device package: D²PAK TO-263).

What is the operating temperature range of the FQB5N50CTM?

-55°C to 150°C (junction temperature).

Is the FQB5N50CTM RoHS compliant?

Yes, it is RoHS3 compliant.

What is the typical drain-source on-resistance (Rds(on)) of the FQB5N50CTM?

1.4 Ohm maximum at Id = 2.5 A and Vgs = 10 V.

What is the gate charge (Qg) of the FQB5N50CTM?

24 nC maximum at Vgs = 10 V.

What is the maximum continuous drain current of the FQB5N50CTM?

5 A at case temperature (Tc).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	5 A (Tc)
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	625 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	73 W (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2.5 A, 10 V
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	D²PAK (TO-263)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V @ 250 µA