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FQB5N50CFTM FQB5N50CFTM is a 500V N-Channel MOSFET by On Semiconductor with a continuous drain current of 5A. It features low gate charge (18nC typical) and is supplied in a D2PAK (TO-263) surface mount package.
Mfr Part #:

FQB5N50CFTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQB5N50CFTM is a 500V N-Channel MOSFET by On Semiconductor with a continuous drain current of 5A. It features low gate charge (18nC typical) and is supplied in a D2PAK (TO-263) surface mount package.
✓ Total Stock: 20 pcs

FQB5N50CFTM Available from 1 distributor

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FQB5N50CFTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB5N50CFTM Description

Short technical summary and product information.

The FQB5N50CFTM is a 500V N-Channel MOSFET from On Semiconductor, designed for high-efficiency switched-mode power supplies and electronic lamp ballasts. It uses Fairchild's planar stripe DMOS technology to minimize on-state resistance and provide fast switching performance.

 

Key electrical specifications include a drain-source breakdown voltage of 500V, continuous drain current of 5A at 25°C (3.2A at 100°C), and pulsed drain current up to 20A. The maximum drain-source on-resistance is 1.55 Ohm at Vgs=10V and Id=2.5A. Typical gate charge is 18nC, and input capacitance is 625pF maximum at Vds=25V.

 

The device is rated for single-pulse avalanche energy of 300mJ and repetitive avalanche energy of 9.6mJ. It has a power dissipation of 96W at case temperature 25°C, with a junction-to-case thermal resistance of 1.3°C/W. The operating junction temperature range is -55°C to 150°C.

 

The FQB5N50CFTM is supplied in a D2PAK (TO-263) surface mount package, with a standard tape and reel quantity of 800. It is RoHS3 compliant (unverified) and has MSL 1 moisture sensitivity level.

FQB5N50CFTM Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor FQB5N50CFTM 500V N-Channel MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

FQB5N50CFTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB5N50CFTM Features

  • 500V drain-source breakdown voltage.
  • 5A continuous drain current at 25°C.
  • Low on-resistance of 1.55 Ohm max.
  • Low typical gate charge of 18 nC.
  • 100% avalanche tested with 300 mJ rating.

FQB5N50CFTM Applications

  • High efficiency switched mode power supplies.
  • Electronic lamp ballasts based on half bridge topology.
  • DC-DC converters requiring high voltage MOSFETs.
  • Motor control circuits with fast switching needs.

FQB5N50CFTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FQB5N50CFTM?

500V.

What is the continuous drain current at 25°C?

5A.

What is the threshold voltage?

4V maximum.

What is the operating temperature range?

-55°C to 150°C.

What is the package type?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; surface mount. Supplier device package D²PAK (TO-263).

Is the device RoHS compliant?

Yes, RoHS3 Compliant (unverified).

What is the maximum power dissipation?

96W at Tc=25°C.

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