| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
22,500 pcs
|
22500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
19,200 pcs
|
19200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB50N06LTM is an N-Channel MOSFET from ON Semiconductor, designed for high-efficiency switching applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 52.4A at case temperature. The on-resistance is typically 21mΩ at 10V gate drive, enabling low conduction losses. The gate threshold voltage is 2.5V maximum, and the device can be driven with 5V or 10V logic levels. Gate charge is 32nC at 5V, and input capacitance is 1630pF at 25V, making it suitable for moderate-speed switching. Power dissipation is rated at 3.75W at ambient temperature and 121W at case temperature. The operating junction temperature range is -55°C to 175°C. The device is housed in a surface-mount D2PAK (TO-263) package, which is compatible with standard reflow soldering processes. This MOSFET is suitable for power management, DC-DC converters, motor control, and load switching applications.
| Qty | Low | High |
|---|---|---|
| 800+ | $1.95 | $1.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 60V.
The maximum continuous drain current is 52.4A at case temperature (Tc).
The maximum on-resistance is 21mΩ at 26.2A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 2.5V at 250µA drain current.
The operating junction temperature range is -55°C to 175°C.
The device is available in a TO-263-3, D²Pak (2 leads + tab), TO-263AB package, with supplier device package D²PAK (TO-263).
The part is listed as RoHS3 compliant, but this has not been independently verified.