| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQB4N90TM is a high-voltage N-Channel enhancement mode power MOSFET manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology, now part of On Semiconductor. This device is designed for applications requiring high efficiency and reliable switching performance. It offers a drain-source voltage rating of 900V and continuous drain current of 4.2A at 25°C.
Key electrical characteristics include a low typical gate charge of 24 nC and low reverse transfer capacitance of 9.5 pF, enabling fast switching transitions. The device is 100% avalanche tested and features a single pulsed avalanche energy rating of 570 mJ. The maximum drain-source on-resistance is 3.3 Ohm at Vgs = 10V.
The MOSFET is housed in a D2PAK (TO-263) surface mount package, suitable for automated assembly. The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage is 900V.
The continuous drain current is 4.2A at Tc=25°C.
The maximum drain-source on-resistance is 3.3 Ohm at Vgs=10V and Id=2.1A.
The package is D2PAK (TO-263), a surface mount package.
The operating junction temperature range is -55°C to 150°C.
The device is listed as RoHS3 Compliant, though this status is unverified.