Mfr Part #:

FQB4N80TM

Available from 3 distributors

Mfr Name: On Semiconductor

N-Channel MOSFET, 800V drain-source voltage, 3.9A continuous drain current, surface mount D2PAK package.

✓ Total Stock: 5,367 pcs

$ Price Range: $0.97 - $3.34

FQB4N80TM Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,667 pcs On Request	3667 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Flip Electronics ✓ Non-Authorised Inventory information	1,600 pcs On Request	1600 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Speed Components Ltd ✓ Non-Authorised Inventory information	100 pcs On Request	100 pcs	On Request	1	On Request	On Request	1507	On Request	On Request

FQB4N80TM Description

Short technical summary and product information.

The FQB4N80TM is an N-Channel MOSFET from On Semiconductor, rated for a drain-source voltage of 800V and a continuous drain current of 3.9A at case temperature. It features a low on-resistance of 3.6Ω maximum at 1.95A and 10V gate drive. The device has a typical input capacitance of 880pF and a gate charge of 25nC, suitable for switching applications. The D2PAK (TO-263) package supports surface mount assembly and provides a power dissipation of up to 130W at case temperature. The operating junction temperature range is -55°C to 150°C.

FQB4N80TM Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FQB4N80TM N-Channel MOSFET, 800V, 3.9A, D2PAK

Subcategory: N-Channel MOSFET

FQB4N80TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL Level 1 - Unlimited

REACH Status: REACH Unaffected

FQB4N80TM Estimated Pricing

Qty	Low	High
1+	$3.34	$3.34
10+	$2.17	$2.17
50+	$1.67	$1.67
100+	$1.50	$1.50
800+	$1.05	$1.05
1,600+	$0.97	$0.97

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB4N80TM Features

N-Channel MOSFET with 800V drain-source voltage.
3.9A continuous drain current rating.
Low on-resistance of 3.6 ohms maximum.
Surface mount D2PAK (TO-263) package.
Wide operating temperature range -55°C to 150°C.

FQB4N80TM Applications

Used in high-voltage power switching circuits.
Suitable for DC-DC converter applications.
Ideal for motor control in industrial systems.
Applied in LED lighting power supplies.
Used in battery charging management systems.

FQB4N80TM FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQB4N80TM?

The drain-source voltage rating is 800V.

What package is the FQB4N80TM available in?

The device is available in a D2PAK (TO-263) surface mount package.

What is the operating temperature range of the FQB4N80TM?

The junction temperature range is -55°C to 150°C.

Is the FQB4N80TM RoHS compliant?

The device is listed as RoHS3 compliant, but this has not been verified.

What is the gate charge of the FQB4N80TM?

The maximum gate charge is 25 nC at 10 V.

What is the input capacitance of the FQB4N80TM?

The input capacitance is 880 pF at 25 V drain-source voltage.

What is the maximum drain-source on-resistance of the FQB4N80TM?

The maximum on-resistance is 3.6 Ω at 1.95 A and 10 V gate drive.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	3.9 A (Tc)
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C to 150°C (TJ)
Power Dissipation (Max)	3.13 W (Ta)
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1.95 A, 10 V
Supplier Device Package	D2PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V @ 250 µA