| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,739 pcs
|
2739 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB46N15TM is an N-Channel enhancement-mode power MOSFET manufactured by On Semiconductor using MOSFET (Metal Oxide) technology. It is designed for high-efficiency power switching applications. This MOSFET supports a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 45.6A at Tc=25°C. The maximum on-resistance (Rds(on)) is 42mOhm at a gate-source voltage of 10V and a drain current of 22.8A. The gate charge (Qg) is 110nC at Vgs=10V, and the input capacitance (Ciss) is 3250pF at Vds=25V. The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA, and the maximum gate-source voltage is ±25V. The device can dissipate up to 210W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C. The device is offered in a surface-mount TO-263-3 (D2Pak) package, which is suitable for automated assembly and provides good thermal performance. The supplier device package is D2PAK (TO-263). The component is listed as RoHS3 Compliant and REACH Unaffected, with a moisture sensitivity level of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 173+ | $1.74 | $1.74 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
150V.
Surface Mount, TO-263-3 (D2PAK).
-55°C to 175°C junction temperature.
It is listed as RoHS3 Compliant.
45.6A at Tc=25°C.
42mOhm at Vgs=10V and Id=22.8A.
Maximum 4V at Id=250µA.