| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5,600 pcs
|
5600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,150 pcs
|
2150 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB34P10TM-F085 is a P-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It is designed for high-side switching applications in power management and conversion circuits. The device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 33.5 A at Tc=25°C.
Key electrical characteristics include a maximum on-resistance (Rds(on)) of 60 mOhm at Vgs=10 V and Id=16.75 A, a gate threshold voltage (Vgs(th)) of 4 V maximum at 250 µA, and a gate charge (Qg) of 110 nC at Vgs=10 V. Input capacitance (Ciss) is 2910 pF at Vds=25 V. The MOSFET can handle maximum power dissipation of 3.75 W at ambient temperature and 155 W at case temperature.
The device is housed in a D2PAK (TO-263) surface-mount package, offering a compact footprint for automated assembly. It operates over a junction temperature range of -55°C to 175°C and is compatible with standard surface-mount soldering processes. The part is commonly used in power supplies, load switches, and battery management systems.
The drain-source voltage rating is 100 V.
It comes in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, which is surface mount. The supplier device package is D²PAK (TO-263).
The operating temperature range is -55°C to 175°C (junction temperature).
It is indicated as RoHS3 compliant, but this status is unverified and should be confirmed.
The maximum Rds(on) is 60 mOhm at a drain current of 16.75 A and gate voltage of 10 V.
The maximum gate charge is 110 nC at a gate voltage of 10 V.
The maximum input capacitance is 2910 pF at a drain-source voltage of 25 V.