| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | 0307+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB34N20TM is an N-Channel Power MOSFET manufactured by On Semiconductor. It is designed for high-power switching applications requiring efficient power management.
Key electrical specifications include a drain-source voltage of 200V, continuous drain current of 31A at 25°C case temperature, and a maximum on-resistance of 75mOhm at 15.5A drain current with 10V gate drive. The gate charge is 78nC and input capacitance is 3100pF. The gate threshold voltage is 5V maximum.
Thermal characteristics show a maximum power dissipation of 180W at case temperature 25°C and 3.13W at ambient. The operating junction temperature range is -55°C to 150°C. The device is offered in a surface mount TO-263-3 (D2PAK) package.
Typical applications include switching power supplies, motor control circuits, and other power management systems where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 98+ | $3.08 | $3.08 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface mount TO-263-3 (D2PAK) package.
It is listed as RoHS3 Compliant, but this is unverified with low confidence.
The maximum drain-source voltage is 200V.
The continuous drain current is 31A at case temperature 25°C.
The maximum on-resistance is 75mOhm at 15.5A drain current and 10V gate drive.
The maximum gate threshold voltage is 5V at 250µA drain current.