FQB34N20LTM N-Channel MOSFET with 200V drain-source voltage and 31A continuous drain current. Features 75mOhm on-resistance at 10V gate drive, suitable for high-efficiency switching applications.
Mfr Part #:

FQB34N20LTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 200V drain-source voltage and 31A continuous drain current. Features 75mOhm on-resistance at 10V gate drive, suitable for high-efficiency switching applications.
✓ Total Stock: 1,405 pcs
$ Price Range: $1.69 - $5.05

FQB34N20LTM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,405 pcs
1405 pcs On Request 1 On Request On Request On Request On Request On Request

FQB34N20LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB34N20LTM Description

Short technical summary and product information.

The FQB34N20LTM is an N-channel enhancement mode MOSFET from ON Semiconductor, designed for high-efficiency power switching applications. It is fabricated using advanced MOSFET technology to provide low on-resistance and fast switching performance.

 

Electrical characteristics include a maximum drain-source voltage of 200V and continuous drain current of 31A at case temperature. The device features a typical gate threshold voltage of 2V and is optimized for drive voltages of 5V and 10V. Gate charge is 72nC at 5V, and input capacitance is 3900pF at 25V, enabling efficient gate drive designs.

 

The MOSFET is housed in a surface mount D2PAK (TO-263) package, offering excellent thermal performance with a maximum power dissipation of 180W at case temperature. The operating junction temperature range is -55°C to 150°C, making it suitable for demanding environments.

 

Compliance with RoHS3 and REACH is indicated, and the device has an MSL level of 1 (unlimited). The FQB34N20LTM is suitable for a variety of power conversion circuits including switching regulators, motor controllers, and DC-DC converters.

FQB34N20LTM Quick Information

Product Type: MOSFET (Metal Oxide)
Series: QFET
Canonical Name: FQB34N20LTM N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQB34N20LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

FQB34N20LTM Estimated Pricing

Qty Low High
1+ $5.05 $5.05
10+ $3.34 $3.34
50+ $2.61 $2.61
100+ $2.37 $2.37
800+ $1.69 $1.69

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB34N20LTM Features

  • N-Channel MOSFET with 200V drain-source voltage.
  • 31A continuous drain current at case temperature.
  • Low on-resistance of 75 milliohms at 10V.
  • Surface mount D2PAK package for compact design.
  • RoHS compliant and MSL level 1.

FQB34N20LTM Applications

  • Ideal for high-voltage switching power supplies.
  • Used in power factor correction circuits.
  • Suitable for DC-DC converter designs.
  • Applicable in motor drive inverters.

FQB34N20LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQB34N20LTM?

200V maximum.

What package type is the FQB34N20LTM available in?

Surface mount D2PAK (TO-263) package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the FQB34N20LTM RoHS compliant?

Yes, RoHS3 compliant (unverified, from distributor).

What is the maximum drain current?

31A at case temperature (Tc).

What is the gate threshold voltage?

2V maximum at 250µA drain current.

What is the on-resistance of the MOSFET?

75mOhm maximum at 15.5A drain current and 10V gate-source voltage.

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