BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The FQB33N10TM is a high-performance N-Channel MOSFET manufactured by NXP Semiconductors. It is designed for various power switching applications, featuring a maximum drain-source voltage of 100V and a continuous drain current capability of 33A at 25°C.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 4V (maximum) and a low on-resistance (Rds On) of 0.025 Ohm (maximum). The device also has a maximum gate-source voltage of 20V and a gate charge (Qg) of 55nC.
Packaged in a TO-263-3, D²Pak surface mount configuration, the FQB33N10TM is suitable for applications requiring efficient power management. It operates within a temperature range of -55°C to 150°C.
This MOSFET is designed for reliable performance in demanding environments, offering a balance of voltage handling, current capacity, and thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-263-3, D²Pak (2 Leads + Tab).
-55°C to +150°C.
0.025 Ohm maximum.
33A at 25°C.
55nC.
1100pF.