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FQB33N10TM The FQB33N10TM is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 100V and continuous drain current of 33A. It is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

FQB33N10TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQB33N10TM is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 100V and continuous drain current of 33A. It is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 134,895 pcs

FQB33N10TM Available from 3 distributors

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Romaks Technologies ✓
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120,533 pcs
On Request
120533 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
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12,955 pcs
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12955 pcs On Request 1 On Request On Request 11+ On Request On Request
Xingangxin ✓
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1,407 pcs
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1407 pcs On Request 1 On Request On Request On Request On Request On Request
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FQB33N10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB33N10TM Description

Short technical summary and product information.

The FQB33N10TM is an N-Channel enhancement-mode MOSFET manufactured by On Semiconductor. It features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 33A at case temperature (Tc). The device uses standard MOSFET (Metal Oxide) technology.

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 52 milliohms at a gate drive voltage of 10V and a drain current of 16.5A. The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA. The device has a maximum input capacitance (Ciss) of 1500 pF at 25V drain-source voltage and a maximum total gate charge (Qg) of 51 nC at 10V gate-source voltage.

 

The FQB33N10TM is designed for surface-mount assembly and is supplied in a TO-263-3, D2Pak (2 leads plus tab), or TO-263AB package. The supplier device package is D2PAK (TO-263). The device can dissipate up to 127W at case temperature (Tc) and 3.75W at ambient temperature (Ta). The operating junction temperature range is -55°C to 175°C.

FQB33N10TM Quick Information

Product Type: MOSFET
Canonical Name: FQB33N10TM N-Channel MOSFET
Subcategory: Single N-Channel

FQB33N10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB33N10TM Features

  • N-Channel MOSFET rated for 100V drain-source voltage.
  • Continuous drain current of 33A at case temperature.
  • Maximum on-resistance of 52 milliohms at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package for easy assembly.
  • Operating junction temperature range from -55°C to 175°C.

FQB33N10TM Applications

  • Suitable for power management in DC-DC converters.
  • Used in motor control circuits requiring 100V blocking.
  • Ideal for high-current load switching applications.
  • Applicable in battery protection and power distribution.

FQB33N10TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQB33N10TM?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the FQB33N10TM?

The continuous drain current is 33A at case temperature (Tc).

What is the package type for the FQB33N10TM?

The package is TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, with a supplier device package of D2PAK (TO-263).

What is the operating temperature range of the FQB33N10TM?

The operating junction temperature range is -55°C to 175°C.

What is the maximum on-resistance of the FQB33N10TM?

The maximum drain-source on-resistance is 52 milliohms at a gate drive voltage of 10V and a drain current of 16.5A.

What is the maximum gate threshold voltage for the FQB33N10TM?

The maximum gate threshold voltage is 4V at a drain current of 250µA.

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