| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,302 pcs
|
2302 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor offers a 200V drain-source breakdown voltage and 28A continuous drain current at 25°C. It features a maximum on-resistance of 82mOhm at 10V gate drive, gate charge of 110nC, and input capacitance of 2220pF for efficient switching. The device is 100% avalanche tested and designed for high dv/dt capability.
Packaged in a surface-mount D²PAK (TO-263-3), it operates over a junction temperature range of -55°C to 150°C. Typical applications include switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
200 V.
28 A at 25°C case temperature.
82 mOhm maximum at 14 A and 10 V gate drive.
110 nC maximum at 10 V gate-source voltage.
D²PAK (TO-263), surface-mount.
-55°C to 150°C junction temperature.
Yes, RoHS3 compliant (unverified).