FQB25N33TM-F085 FQB25N33TM-F085 is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 330V and continuous drain current of 25A. It is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

FQB25N33TM-F085

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
FQB25N33TM-F085 is an N-Channel MOSFET from On Semiconductor with a maximum drain-source voltage of 330V and continuous drain current of 25A. It is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 50,400 pcs
$ Price Range: $1.15

FQB25N33TM-F085 Available from 1 distributor

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✓ Non-Authorised
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50,400 pcs
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FQB25N33TM-F085 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB25N33TM-F085 Description

Short technical summary and product information.

The FQB25N33TM-F085 is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using planar stripe DMOS technology. It is designed for high-efficiency switched-mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topologies.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 330V, a continuous drain current (Id) of 25A at Tc=25°C, and a maximum drain-source on-resistance (Rds(on)) of 230 mOhm at Vgs=10V and Id=12.5A. The device features a typical gate charge of 58 nC and low Crss (typical 40 pF) for fast switching performance.

 

The MOSFET is 100% avalanche tested with a single pulse avalanche energy rating of 370 mJ and an improved dv/dt capability of 4.5 V/ns. It is qualified to AEC Q101 for automotive applications.

 

The device is offered in a surface-mount D2PAK (TO-263) package with a standard reel quantity of 800 pieces. The operating junction temperature range is -55°C to +150°C.

FQB25N33TM-F085 Quick Information

Product Type: MOSFET
Canonical Name: FQB25N33TM-F085 N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQB25N33TM-F085 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB25N33TM-F085 Estimated Pricing

Qty Low High
800+ $1.15 $1.15

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB25N33TM-F085 Features

  • N-Channel MOSFET with 330V drain-source voltage.
  • Continuous drain current of 25A at case temperature.
  • Low on-resistance of 230 mOhm at 10V gate drive.
  • 100% avalanche tested with 370 mJ energy rating.
  • Qualified to AEC Q101 for automotive applications.

FQB25N33TM-F085 Applications

  • High-efficiency switched-mode power supplies.
  • Active power factor correction circuits.
  • Electronic lamp ballasts with half-bridge topology.
  • Automotive engine control modules.

FQB25N33TM-F085 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQB25N33TM-F085?

The maximum drain-source voltage (Vdss) is 330V.

What is the continuous drain current rating?

The continuous drain current (Id) is 25A at Tc=25°C.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 230 mOhm at Vgs=10V and Id=12.5A.

What package does the FQB25N33TM-F085 come in?

It is available in a surface-mount D2PAK (TO-263) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the FQB25N33TM-F085 RoHS compliant?

The datasheet indicates RoHS compliance, but this is unverified.

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