FQB22P10TM The FQB22P10TM is a P-Channel power MOSFET from On Semiconductor with a drain-source voltage of 100V and a continuous drain current of 22A. It is housed in a surface-mount D2PAK (TO-263) package.
Mfr Part #:

FQB22P10TM

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQB22P10TM is a P-Channel power MOSFET from On Semiconductor with a drain-source voltage of 100V and a continuous drain current of 22A. It is housed in a surface-mount D2PAK (TO-263) package.
✓ Total Stock: 23,038 pcs
$ Price Range: $0.96 - $3.03

FQB22P10TM Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FQB22P10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB22P10TM Description

Short technical summary and product information.

The FQB22P10TM is a P-Channel enhancement-mode power MOSFET manufactured by On Semiconductor. It features a maximum drain-to-source voltage (Vdss) of 100V and a continuous drain current of 22A at case temperature (Tc). The device offers a maximum on-resistance (Rds(on)) of 125mOhm at Vgs=10V and Id=11A, enabling efficient power switching.

 

This MOSFET is designed for high-power switching applications requiring P-Channel polarity. It has a maximum gate threshold voltage of 4V at Id=250µA and a maximum gate charge of 50nC at Vgs=10V. The input capacitance is rated at 1500pF maximum at Vds=25V. The device can dissipate up to 125W at the case and 3.75W at ambient temperature.

 

The FQB22P10TM is supplied in a TO-263-3 (D2PAK) surface-mount package, suitable for automated assembly. It operates over a junction temperature range of -55°C to +175°C. The maximum gate-source voltage is ±30V.

FQB22P10TM Quick Information

Product Type: Power MOSFET
Series: QFET
Canonical Name: FQB22P10TM P-Channel Power MOSFET, 100V, 22A, D2PAK
Subcategory: P-Channel Power MOSFET

FQB22P10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQB22P10TM Estimated Pricing

Qty Low High
1+ $3.03 $3.03
10+ $1.96 $1.96
50+ $1.50 $1.50
100+ $1.35 $1.35
800+ $1.03 $1.03
1,600+ $0.96 $0.96

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB22P10TM Features

  • P-Channel MOSFET rated for 100V drain-source.
  • Continuous drain current of 22A at case temperature.
  • Low on-resistance of 125mOhm maximum at 10V gate drive.
  • Surface-mount D2PAK (TO-263) package for automated assembly.
  • Wide operating junction temperature range from -55°C to +175°C.

FQB22P10TM Applications

  • High-side switching in DC-DC converters.
  • Load switching in power management systems.
  • Battery protection circuits in portable devices.
  • Motor drive and solenoid control applications.
  • Power supply output switching and regulation.

FQB22P10TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQB22P10TM?

The maximum drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating of the FQB22P10TM?

The continuous drain current is 22A at case temperature (Tc).

What is the on-resistance of the FQB22P10TM?

The maximum drain-to-source on-resistance (Rds(on)) is 125mOhm at Vgs=10V and Id=11A.

What package does the FQB22P10TM come in?

The FQB22P10TM is available in a TO-263-3 (D2PAK) surface-mount package.

What is the operating temperature range of the FQB22P10TM?

The operating junction temperature range is -55°C to +175°C.

Is the FQB22P10TM RoHS compliant?

The FQB22P10TM is listed as RoHS3 compliant, though this is unverified.

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