FQB1P50TM The On Semiconductor FQB1P50TM is a P-Channel MOSFET with a 500V drain-to-source voltage and a continuous current rating of 1.5A. It features a surface mount D2PAK package.
Mfr Part #:

FQB1P50TM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor FQB1P50TM is a P-Channel MOSFET with a 500V drain-to-source voltage and a continuous current rating of 1.5A. It features a surface mount D2PAK package.
✓ Total Stock: 5,050 pcs

FQB1P50TM Available from 3 distributors

✓ Authorised
✓ Non-Authorised

FQB1P50TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB1P50TM Description

Short technical summary and product information.

The On Semiconductor FQB1P50TM is a P-Channel MOSFET designed for various electronic applications. It offers a maximum drain-to-source voltage (Vdss) of 500V and can handle a continuous current of 1.5A (Tc).

 

Key electrical characteristics include a maximum on-resistance (Rds On) of 10.5 Ohms at 750mA and 10V gate-source voltage. The gate charge (Qg) is 14 nC (max) at 10V, and the input capacitance (Ciss) is 350 pF (max) at 25V. The device supports a maximum gate-to-source voltage (Vgs) of ±30V, with a threshold voltage (Vgs(th)) of 5V at 250µA.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOSFET) technology. It has a maximum power dissipation of 3.13W when mounted on a PCB (Ta) and 63W when measured at the case (Tc). The operating junction temperature ranges from -55°C to 150°C.

 

The FQB1P50TM is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package, designed for surface mounting. Its robust construction and electrical specifications make it suitable for power switching and control applications.

FQB1P50TM Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: On Semiconductor FQB1P50TM P-Channel MOSFET
Subcategory: P-Channel

FQB1P50TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB1P50TM Features

  • 500V drain-to-source voltage rating.
  • 1.5A continuous current capability.
  • 10.5 Ohm maximum on-resistance.
  • Surface mount D2PAK package.
  • P-Channel MOSFET technology.

FQB1P50TM Applications

  • Suitable for power switching circuits.
  • Used in general purpose applications.
  • Ideal for control circuitry.

FQB1P50TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the FQB1P50TM?

The maximum drain-to-source voltage (Vdss) is 500V.

What is the continuous current rating of the FQB1P50TM?

The continuous current rating is 1.5A (Tc).

What is the maximum on-resistance (Rds On) for this MOSFET?

The Rds On is 10.5 Ohms at 750mA and 10V.

What is the package type for the FQB1P50TM?

It is supplied in a TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package.

What is the operating temperature range for the FQB1P50TM?

The operating junction temperature is -55°C to 150°C.

What is the RoHS status of the FQB1P50TM?

The RoHS status is Compliant.

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