FQB19N20LTM N-Channel MOSFET with 200V drain-source voltage and 21A continuous drain current. Surface mount D2PAK (TO-263) package.
Mfr Part #:

FQB19N20LTM

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 200V drain-source voltage and 21A continuous drain current. Surface mount D2PAK (TO-263) package.
✓ Total Stock: 4,675 pcs
$ Price Range: $0.78 - $2.78

FQB19N20LTM Available from 4 distributors

✓ Authorised
✓ Non-Authorised

FQB19N20LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB19N20LTM Description

Short technical summary and product information.

The FQB19N20LTM is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 21A at case temperature 25°C.

 

Key electrical characteristics include a maximum on-resistance (Rds(on)) of 140 mOhm at Vgs = 10V and Id = 10.5A, a gate charge (Qg) of 35 nC at Vgs = 5V, and an input capacitance (Ciss) of 2200 pF at Vds = 25V. The device supports a gate-source voltage range of ±20V and has a typical threshold voltage of 2V at Id = 250 µA.

 

The MOSFET is housed in a D2PAK (TO-263) surface-mount package with a maximum power dissipation of 140W at case temperature and 3.13W at ambient temperature. Operating junction temperature range is -55°C to 150°C.

 

Compliance information: Listed as RoHS3 compliant and REACH unaffected (unverified), with an MSL level of 1 (unlimited).

FQB19N20LTM Quick Information

Product Type: N-Channel MOSFET
Series: FQB19N20L
Canonical Name: FQB19N20LTM
Subcategory: Single MOSFET

FQB19N20LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

FQB19N20LTM Estimated Pricing

Qty Low High
1+ $2.78 $2.78
10+ $1.79 $1.79
50+ $1.36 $1.36
100+ $1.23 $1.23
800+ $0.84 $0.84
1,600+ $0.78 $0.78

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB19N20LTM Features

  • 200V drain-source voltage rating.
  • 21A continuous drain current.
  • 140mOhm on-resistance at 10V gate drive.
  • D2PAK (TO-263) surface mount package.

FQB19N20LTM Applications

  • Suitable for high-voltage power switching.
  • Used in DC-DC converters and inverters.
  • Ideal for motor drive circuits.

FQB19N20LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

The maximum drain-source voltage is 200 V.

What is the package type?

The device is available in TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package is D2PAK (TO-263).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

Listed as RoHS3 compliant, but the status is unverified.

What is the maximum drain current?

The continuous drain current is 21 A at case temperature 25°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 2 V at Id = 250 µA.

What is the on-resistance?

The maximum on-resistance is 140 mOhm at Vgs = 10 V and Id = 10.5 A.

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