FQB19N20CTM The FQB19N20CTM is an N-Channel MOSFET from ON Semiconductor rated for 200V drain-source voltage and 19A continuous current. It comes in a surface-mount D²PAK (TO-263) package.
Mfr Part #:

FQB19N20CTM

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQB19N20CTM is an N-Channel MOSFET from ON Semiconductor rated for 200V drain-source voltage and 19A continuous current. It comes in a surface-mount D²PAK (TO-263) package.
✓ Total Stock: 1,059 pcs

FQB19N20CTM Available from 3 distributors

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524 pcs
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524 pcs
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FQB19N20CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQB19N20CTM Description

Short technical summary and product information.

The FQB19N20CTM is an N-Channel MOSFET produced by ON Semiconductor. It is rated for a maximum drain-to-source voltage of 200 V and a continuous drain current of 19 A at case temperature. The device features a maximum on-resistance of 170 mΩ when driven with a 10 V gate-source voltage.

 

With a maximum gate charge of 53 nC and input capacitance of 1080 pF, the transistor is suited for high-frequency switching circuits. Maximum power dissipation is 139 W at case temperature and 3.13 W at ambient temperature. The operating junction temperature ranges from -55°C to 150°C.

 

The MOSFET is supplied in a surface-mount TO-263-3 (D²PAK) package, with a supplier device package of D²PAK (TO-263). It uses standard metal-oxide semiconductor technology and supports a gate-source voltage range of ±30 V.

FQB19N20CTM Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: N-Channel 200V 19A Power MOSFET
Subcategory: Single MOSFET

FQB19N20CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQB19N20CTM Features

  • N-Channel MOSFET with 200V drain-source rating.
  • 19A continuous drain current capability.
  • 170mΩ maximum on-resistance at 10V Vgs.
  • Surface-mount D²PAK package for power designs.
  • Operating junction temperature range -55°C to 150°C.

FQB19N20CTM Applications

  • Used in switch-mode power supplies.
  • Suitable for DC-DC converter circuits.
  • Ideal for motor drive applications.
  • For power management in automotive electronics.

FQB19N20CTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage rating of the FQB19N20CTM?

200 V.

What is the continuous drain current rating?

19 A at case temperature (Tc).

What is the maximum on-resistance and under what conditions?

170 mΩ maximum at ID=9.5A and VGS=10V.

What package is the FQB19N20CTM available in?

TO-263-3, D²Pak (2 leads + tab), TO-263AB; supplier device package is D²PAK.

What is the operating junction temperature range?

-55°C to 150°C.

What is the maximum gate charge?

53 nC at VGS=10V.

What is the RoHS compliance status?

RoHS3 compliant per existing data, but unverified.

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