DistyParts Icon
FQB19N10TM N-Channel 100V 19A power MOSFET in D2PAK (TO-263) surface mount package. Rds(on) of 100mOhm at 10V gate drive.
Mfr Part #:

FQB19N10TM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel 100V 19A power MOSFET in D2PAK (TO-263) surface mount package. Rds(on) of 100mOhm at 10V gate drive.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.08 - $0.12

FQB19N10TM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request 0801+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQB19N10TM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

FQB19N10TM Description

Short technical summary and product information.

The FQB19N10TM is a 100V N-Channel power MOSFET from onsemi's QFET family, manufactured using Fairchild's planar stripe DMOS technology. It delivers 19A continuous drain current with a typical gate charge of 19nC and Rds(on) of 100mOhm at Vgs=10V.

 

This device features low on-resistance, fast switching, and 100% avalanche testing. It supports a maximum junction temperature of 175°C and includes improved dv/dt capability, making it suited for DC/DC converters, DC motor control, and audio amplifier applications.

 

Packaged in the surface-mount D2PAK (TO-263), the FQB19N10TM offers 75W power dissipation at Tc=25°C and junction-to-case thermal resistance of 2.0°C/W.

FQB19N10TM Quick Information

Product Type: N-Channel Power MOSFET
Canonical Name: FQB19N10TM
Subcategory: N-Channel

FQB19N10TM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB19N10TM Estimated Pricing

Qty Low High
1+ $0.12 $0.12
10+ $0.11 $0.11
100+ $0.10 $0.10
500+ $0.09 $0.09
1,000+ $0.08 $0.08

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB19N10TM Features

  • N-Channel 100V 19A power MOSFET.
  • Low on-resistance of 100mOhm max.
  • Low gate charge of 19 nC typical.
  • Surface mount D2PAK (TO-263) package.
  • 100% avalanche tested for ruggedness.

FQB19N10TM Applications

  • Audio amplifier output stages.
  • High efficiency DC/DC converters.
  • DC motor control circuits.
  • Low voltage switching power supplies.

FQB19N10TM FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the FQB19N10TM?

The maximum drain-source voltage (Vdss) is 100 V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 19 A at Tc=25°C.

What package does the FQB19N10TM come in?

The FQB19N10TM is offered in a D2PAK (TO-263) surface mount package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to +175°C.

Is the FQB19N10TM RoHS compliant?

The part is marked as RoHS3 compliant, though this is unverified.

What is the typical gate charge of the FQB19N10TM?

The typical gate charge is 19 nC at Vgs=10V.

Home

Categories