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FQB13N10LTM N-Channel MOSFET, 100V drain-source voltage, 12.8A continuous current, surface mount D2PAK package.
Mfr Part #:

FQB13N10LTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET, 100V drain-source voltage, 12.8A continuous current, surface mount D2PAK package.
✓ Total Stock: 110 pcs
$ Price Range: $0.34 - $0.45

FQB13N10LTM Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Husky International Electronic ✓
Non-Authorised Inventory information
110 pcs
On Request
110 pcs On Request 1 On Request On Request N/A On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

FQB13N10LTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB13N10LTM Description

Short technical summary and product information.

The FQB13N10LTM is an N-Channel enhancement mode power MOSFET produced using Fairchild's planar stripe DMOS technology. It is designed for low voltage applications requiring high efficiency and robust switching performance.

 

Key electrical specifications include a maximum drain-source voltage of 100V, continuous drain current of 12.8A at 25°C (9.05A at 100°C), and a low on-resistance of 180 mΩ at Vgs = 10V. The device offers a typical gate charge of 8.7 nC and a low reverse transfer capacitance of 20 pF, enabling fast switching. It is avalanche rated with a single pulse avalanche energy of 95 mJ.

 

The MOSFET is housed in a TO-263-3 (D²PAK) surface mount package and operates over a junction temperature range of -55°C to 175°C. Typical applications include high efficiency switching DC/DC converters, DC motor control, and power management in low voltage systems.

FQB13N10LTM Quick Information

Product Type: MOSFET (Metal Oxide)
Series: FQB13N10L
Canonical Name: FQB13N10LTM
Subcategory: N-Channel MOSFET

FQB13N10LTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB13N10LTM Estimated Pricing

Qty Low High
800+ $0.45 $0.45
1,600+ $0.41 $0.41
2,400+ $0.39 $0.39
4,000+ $0.37 $0.37
5,600+ $0.35 $0.35
8,000+ $0.34 $0.34
20,000+ $0.34 $0.34

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQB13N10LTM Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current of 12.8A at 25°C.
  • Low on-resistance of 180 mOhm at 10V gate drive.
  • Low gate charge typical 8.7 nC for fast switching.
  • Rated for 175°C maximum junction temperature.

FQB13N10LTM Applications

  • High efficiency switching DC/DC converters.
  • DC motor control applications.
  • Power management in low voltage systems.
  • Avalanche rated for robust operation.

FQB13N10LTM FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the FQB13N10LTM?

100V maximum.

What package is the FQB13N10LTM available in?

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB; supplier device package D²PAK (TO-263).

What is the operating temperature range?

-55°C to 175°C (junction temperature).

Is the FQB13N10LTM RoHS compliant?

Yes, RoHS3 compliant (low confidence).

What is the continuous drain current?

12.8A at case temperature 25°C, 9.05A at 100°C.

What is the gate threshold voltage?

Maximum 2V at Id=250µA.

What is the typical gate charge?

8.7 nC typical (test condition not specified).

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