| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
52,800 pcs
|
52800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,472 pcs
|
1472 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB12P20TM is a P-Channel enhancement mode power MOSFET from onsemi, manufactured using planar stripe DMOS technology. It is designed for high-efficiency switching applications such as DC-DC converters. The device features a drain-source voltage rating of -200V and a continuous drain current of -11.5A at 25°C case temperature, with a maximum on-resistance of 470mΩ at 10V gate drive. This MOSFET offers low gate charge (typical 31 nC) and low Crss (typical 30 pF), enabling fast switching performance. It is 100% avalanche tested and provides improved dv/dt capability, making it suitable for rugged power applications. The single pulsed avalanche energy rating is 810 mJ, and the repetitive avalanche energy is 12 mJ. Housed in a surface-mount D2PAK (TO-263) package, the FQB12P20TM is Pb-Free and RoHS compliant. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 120W at case temperature 25°C. Thermal resistance junction-to-case is 1.04°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.08 | $3.08 |
| 10+ | $1.99 | $1.99 |
| 50+ | $1.52 | $1.52 |
| 100+ | $1.37 | $1.37 |
| 800+ | $1.05 | $1.05 |
| 1,600+ | $0.97 | $0.97 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-200 V (maximum).
TO-263-3 (D²Pak) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is marked as RoHS compliant and Pb-Free in the datasheet.
Maximum 470 mΩ at VGS = -10V and ID = -5.75A.
Typical 31 nC at VGS = -10V.
Single pulsed avalanche energy is 810 mJ at specified test conditions.