| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,054 pcs
|
5054 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Power Dissipation (Maximum @ Tc) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB11P06TM is a P-Channel enhancement-mode power MOSFET manufactured by ON Semiconductor. This device is designed for high-efficiency power management applications requiring a P-Channel switch. It is built using MOSFET technology and is capable of handling a maximum drain-to-source voltage of 60V and a continuous drain current of 11.4A at case temperature.
Key electrical characteristics include a maximum on-resistance of 175mΩ at a gate-source voltage of 10V and a drain current of 5.7A. The device has a typical gate threshold voltage of 4V and a maximum gate charge of 17nC at 10V. Input capacitance is rated at 550pF at a drain-source voltage of 25V, which influences switching performance.
The FQB11P06TM is housed in a surface-mount TO-263-3 (D²Pak) package, which provides efficient thermal management. It can dissipate up to 53W at case temperature and operates over a junction temperature range of -55°C to 175°C. This makes it suitable for a variety of power switching and load control circuits.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum continuous drain current is 11.4A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 175mΩ at a drain current of 5.7A and a gate-source voltage of 10V.
The operating junction temperature range is -55°C to 175°C.
The device is available in a surface-mount TO-263-3 (D²Pak) package.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
The maximum gate threshold voltage (Vgs(th)) is 4V at a drain current of 250µA.