| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
749 pcs
|
749 pcs | On Request | 1 | On Request | On Request | 316 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB11N40TM is an N-Channel enhancement mode power MOSFET manufactured by ON Semiconductor (originally Fairchild Semiconductor). It is designed using planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. With a drain-to-source voltage rating of 400V and a continuous drain current of 11.4A at 25°C, this MOSFET is suitable for high-efficiency power conversion applications.
Key electrical characteristics include a maximum on-resistance of 0.48Ω at VGS = 10V, a typical gate charge of 27nC, and a low reverse transfer capacitance of 20pF. The device is avalanche rated with a single pulsed avalanche energy of 520mJ, ensuring robustness in high-energy pulse conditions. The maximum power dissipation is 147W at case temperature 25°C, with a junction-to-case thermal resistance of 0.85°C/W.
The FQB11N40TM is housed in a D2PAK (TO-263) surface-mount package, which allows for efficient heat dissipation and compact PCB layout. The operating junction temperature range is -55°C to +150°C, making it suitable for demanding environments. This MOSFET is RoHS and REACH compliant (unverified confidence) and has an MSL rating of 1 (unlimited).
Typical applications include switch mode power supplies (SMPS), electronic lamp ballasts, and other power conversion circuits where high efficiency and fast switching are required.
| Qty | Low | High |
|---|---|---|
| 363+ | $0.83 | $0.83 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage rating is 400V.
The package is D2PAK (TO-263), also known as TO-263-3.
The operating junction temperature range is -55°C to +150°C.
Yes, it is listed as RoHS3 compliant, but this compliance is unverified.
The continuous drain current at TC = 25°C is 11.4A.
The typical gate charge is 27nC.
The maximum on-resistance is 480mΩ at ID = 5.7A and VGS = 10V.