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FQB11N40CTM The FQB11N40CTM is an N-Channel MOSFET from On Semiconductor with a 400V drain-source voltage rating and 10.5A continuous drain current. It is housed in a D2PAK (TO-263) surface-mount package.
Mfr Part #:

FQB11N40CTM

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The FQB11N40CTM is an N-Channel MOSFET from On Semiconductor with a 400V drain-source voltage rating and 10.5A continuous drain current. It is housed in a D2PAK (TO-263) surface-mount package.
✓ Total Stock: 108 pcs

FQB11N40CTM Available from 1 distributor

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108 pcs
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FQB11N40CTM Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQB11N40CTM Description

Short technical summary and product information.

The FQB11N40CTM is an N-Channel enhancement-mode MOSFET manufactured by ON Semiconductor. It is designed for high-voltage switching applications requiring efficient power management.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 400V and a continuous drain current (Id) of 10.5A at 25°C case temperature. The device features a maximum on-resistance (Rds(on)) of 530 mOhm at Vgs=10V and Id=5.25A. The gate threshold voltage (Vgs(th)) is 4V maximum at Id=250µA. Total gate charge (Qg) is 35 nC maximum at Vgs=10V, and input capacitance (Ciss) is 1090 pF maximum at Vds=25V.

 

The MOSFET is housed in a D2PAK (TO-263) surface-mount package, which is suitable for automated assembly and provides good thermal performance. The maximum power dissipation is 135W at 25°C case temperature. The operating junction temperature range is -55°C to 150°C.

FQB11N40CTM Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQB11N40CTM N-Channel MOSFET 400V 10.5A D2PAK
Subcategory: Single MOSFET

FQB11N40CTM Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQB11N40CTM Features

  • N-Channel MOSFET rated for 400V drain-source voltage.
  • Continuous drain current of 10.5A at 25°C.
  • Maximum on-resistance of 530 mOhm at Vgs=10V.
  • Total gate charge of 35 nC maximum.
  • Surface-mount D2PAK (TO-263) package.

FQB11N40CTM Applications

  • High-voltage DC-DC converter circuits.
  • Power supply switching applications.
  • Motor control and inverter systems.
  • Load switching and power management.

FQB11N40CTM FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQB11N40CTM?

The maximum drain-source voltage (Vdss) is 400V.

What is the continuous drain current rating of the FQB11N40CTM?

The continuous drain current (Id) is 10.5A at 25°C case temperature.

What is the on-resistance of the FQB11N40CTM?

The maximum on-resistance (Rds(on)) is 530 mOhm at Vgs=10V and Id=5.25A.

What package does the FQB11N40CTM come in?

The FQB11N40CTM is available in a D2PAK (TO-263) surface-mount package.

What is the operating temperature range of the FQB11N40CTM?

The operating junction temperature range is -55°C to 150°C.

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