| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB10N50CFTM-WS is an N-Channel power MOSFET from On Semiconductor, designed for high-voltage switching applications. It features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 10A at case temperature (Tc).
The device offers a maximum on-resistance (Rds(on)) of 610 mOhm at a gate drive of 10V and 5A drain current. It has a maximum gate charge (Qg) of 60 nC at Vgs=10V and an input capacitance (Ciss) of 2210 pF at Vds=25V. The gate threshold voltage (Vgs(th)) is a maximum of 4V at Id=250 µA, and the maximum gate-source voltage is ±30V.
This MOSFET is housed in a surface-mount D2PAK (TO-263) package, suitable for automated assembly. It can dissipate up to 143W at case temperature and operates over a junction temperature range of -55°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 800+ | $0.95 | $0.95 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 500V.
The maximum continuous drain current (Id) is 10A at case temperature (Tc).
The package is D2PAK (TO-263), a surface mount package.
The operating junction temperature range is -55°C to 150°C.
The maximum on-resistance is 610 mOhm at a gate-source voltage of 10V and a drain current of 5A.
The maximum gate charge (Qg) is 60 nC at a gate-source voltage of 10V.
The maximum power dissipation is 143W at case temperature (Tc).