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FQB10N20TM

FQB10N20TM is an N-Channel MOSFET from On Semiconductor with 200V drain-source voltage rating and 10A continuous drain current. It features a maximum on-resistance of 360mΩ at 5A and 10V gate drive, and is offered in a D2PAK surface mount package.

✓ Total Stock: 9,969 pcs

FQB10N20TM Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	9,969 pcs On Request	9969 pcs	On Request	1	On Request	On Request	07+	On Request	On Request

FQB10N20TM Description

Short technical summary and product information.

FQB10N20TM is an N-Channel Power MOSFET from On Semiconductor, designed for medium-voltage switching applications. It features a drain-source voltage (Vdss) of 200 V and a continuous drain current of 10 A at Tc. The device exhibits a maximum on-resistance of 360 mΩ at 5 A drain current and 10 V gate drive, ensuring efficient power handling. Gate charge is specified at 18 nC maximum at Vgs = 10 V, and input capacitance is 670 pF at Vds = 25 V.

The MOSFET operates across a junction temperature range of -55°C to +150°C, with a maximum gate-source voltage of ±30 V. The threshold voltage (Vgs(th)) is 5 V maximum at 250 μA. These characteristics make it suitable for power supply, DC-DC converter, and motor control circuits where 200 V blocking and 10 A current are needed.

The device is offered in a surface mount D2PAK (TO-263-3) package, which provides a compact footprint for automated assembly. The TO-263AB variant is also specified, enabling design flexibility. Mounting type is surface mount, compatible with standard reflow soldering processes.

FQB10N20TM Quick Information

Product Type: N-Channel MOSFET

Canonical Name: FQB10N20TM N-Channel MOSFET

Subcategory: Single MOSFET

FQB10N20TM Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQB10N20TM Features

N-Channel MOSFET with 200V drain-source voltage.
10A continuous drain current rating.
Low 360mΩ on-resistance at 5A,10V.
Surface mount D2PAK (TO-263) package.
Wide junction temperature -55°C to 150°C.

FQB10N20TM Applications

Power switching circuits up to 200V and 10A.
Surface mount designs requiring D2PAK package.

FQB10N20TM FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IRF640N?

The drain-source voltage (Vdss) is 200V.

What is the maximum drain current for the IRF640N?

The maximum drain current is 10A at Tc.

What is the on-resistance of the IRF640N?

The maximum drain-source on-resistance (Rds On) is 360 mOhm at Vgs = 10V and Id = 5A.

What is the gate threshold voltage of the IRF640N?

The maximum gate threshold voltage (Vgs(th)) is 5V at Id = 250µA.

What package is the IRF640N available in?

The IRF640N is available in a TO-263-3 (D²Pak) surface mount package.

What is the operating temperature range of the IRF640N?

The operating junction temperature range is -55°C to 150°C.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	10 A (Tc)
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	670 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	360 mOhm @ 5A, 10V
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5 V @ 250µA