| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,767 pcs
|
4767 pcs | On Request | 1 | On Request | On Request | 05+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQB10N20CTM is an N-Channel enhancement mode power MOSFET manufactured by On Semiconductor using QFET planar stripe DMOS technology. It is designed for high efficiency switching applications such as DC/DC converters, switch mode power supplies, and DC-AC converters for uninterruptible power supplies.
Key specifications include a drain-source voltage (Vdss) of 200V, continuous drain current of 9.5A at 25°C, and a low on-state resistance of 0.36 ohms typical at VGS = 10V. The device features low gate charge (typical 20 nC) and low reverse transfer capacitance (typical 40.5 pF) for fast switching performance.
The MOSFET is 100% avalanche tested and offers improved dv/dt capability. It is housed in a D2PAK (TO-263) surface mount package, suitable for automated assembly. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $45.29 | $45.29 |
| 10+ | $37.59 | $37.59 |
| 100+ | $33.51 | $33.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) is 200V.
The continuous drain current is 9.5A at TC = 25°C.
The FQB10N20CTM is available in a D2PAK (TO-263) surface mount package.
The operating junction temperature range is -55°C to +150°C.
The typical on-resistance (Rds(on)) is 0.36 ohms at VGS = 10V.