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FQAF16N50 N-Channel MOSFET with 500V drain-source voltage and 11.3A continuous drain current. Features 320mΩ max Rds(on) at 10V gate drive.
Mfr Part #:

FQAF16N50

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 500V drain-source voltage and 11.3A continuous drain current. Features 320mΩ max Rds(on) at 10V gate drive.
Total Stock: 2,333 pcs
$ Price Range: $3.04

FQAF16N50 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,333 pcs
2333 pcs On Request 1 On Request On Request On Request On Request On Request

FQAF16N50 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
MSL (Moisture Sensitivity Level)
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQAF16N50 Description

Short technical summary and product information.

The FQAF16N50 is an N-Channel power MOSFET from ON Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage rating of 500V and a continuous drain current of 11.3A at Tc. The device offers a low on-resistance of 320mΩ maximum at 10V gate drive, ensuring efficient power conversion. With a maximum gate charge of 75nC and input capacitance of 3000pF, it is suitable for high-frequency switching circuits.

 

This MOSFET is housed in a through-hole TO-3P-3 Full Pack (TO-3PF) package, providing robust thermal performance. The maximum power dissipation is 110W at Tc, and the junction temperature range is -55°C to 150°C. The device requires a drive voltage of 10V to achieve the specified Rds(on) and has a maximum gate threshold voltage of 5V at 250µA drain current.

 

Typical applications include power supplies, inverters, motor controls, and DC-DC converters. The through-hole mounting simplifies assembly in traditional PCB designs. The part is a direct replacement for the Fairchild FQAF16N50 and is now manufactured by ON Semiconductor.

FQAF16N50 Quick Information

Product Type: N-Channel MOSFET
Series: QFET
Canonical Name: FQAF16N50 N-Channel MOSFET
Subcategory: Single MOSFET

FQAF16N50 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

FQAF16N50 Estimated Pricing

Qty Low High
99+ $3.04 $3.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQAF16N50 Features

  • N-Channel MOSFET with 500V drain-source voltage.
  • 11.3A continuous drain current rating.
  • Low 320mΩ maximum on-resistance.
  • 75nC gate charge for efficient switching.
  • Through-hole TO-3PF package for easy mounting.

FQAF16N50 Applications

  • Used in high-voltage power supply circuits.
  • Ideal for motor control applications.
  • Suitable for DC-DC converters.
  • Common in switching power amplifiers.
  • Applied in uninterruptible power supplies.

FQAF16N50 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the FQAF16N50?

500V.

What is the package type of this MOSFET?

TO-3P-3 Full Pack (TO-3PF).

What is the operating junction temperature range?

-55°C to 150°C.

Is the FQAF16N50 RoHS compliant?

The part is marked as RoHS3 compliant, but this is unverified and the datasheet does not confirm it. Verify with manufacturer.

What is the maximum on-resistance (Rds(on))?

320mΩ at 5.65A and 10V.

What is the gate charge?

75nC at 10V.

What is the input capacitance?

3000pF at 25V.

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