| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
96,480 pcs
|
96480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,524 pcs
|
2524 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQAF11N90C is an N-channel enhancement mode power MOSFET from On Semiconductor, built using planar stripe and DMOS technology. It is designed for high-voltage switching applications such as switched mode power supplies and active power factor correction.
Key electrical specifications include a drain-source voltage rating of 900V, continuous drain current of 7A at 25°C, and a maximum on-resistance of 1.1Ω at Vgs=10V. The device features low gate charge (typical 60nC) and low reverse transfer capacitance (typical 23pF), contributing to efficient switching performance.
The MOSFET is capable of withstanding high avalanche energy, with a single pulsed avalanche energy rating of 960mJ. It is offered in a TO-3PF-L through-hole package, which provides good thermal performance with a junction-to-case thermal resistance of 1.04°C/W. The device is Pb-Free and RoHS compliant (unverified).
| Qty | Low | High |
|---|---|---|
| 1+ | $5.88 | $5.88 |
| 30+ | $3.33 | $3.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 900V minimum at Vgs=0V and Id=250µA.
The device is available in a TO-3PF-L through-hole package.
The operating junction temperature range is -55°C to 150°C.
The datasheet indicates the device is Pb-Free, but RoHS compliance status is unverified.
The maximum on-resistance is 1.1Ω at Vgs=10V and Id=3.5A.
The typical gate charge is 60nC, with a maximum of 80nC at Vgs=10V.
The single pulsed avalanche energy rating is 960mJ under specified test conditions.