| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQAF11N90 is a 900V N-Channel enhancement mode power MOSFET manufactured using Fairchild's planar stripe DMOS technology. This device is designed to minimize on-state resistance and provide superior switching performance, making it well suited for high efficiency switch mode power supplies.
Key electrical specifications include a drain-source breakdown voltage of 900V, continuous drain current of 7.2A at 25°C case temperature (4.55A at 100°C), and a maximum drain-source on-resistance of 0.96Ω at VGS=10V. The gate threshold voltage ranges from 3.0V to 5.0V. The device features low gate charge (72 nC typical, 94 nC maximum) and low reverse transfer capacitance (30 pF typical). It is 100% avalanche tested with a single pulsed avalanche energy rating of 1000 mJ.
The FQAF11N90 is offered in a TO-3PF through-hole package with three pins. It has a maximum power dissipation of 120W at 25°C case temperature and an operating junction temperature range of -55°C to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
The drain-source breakdown voltage is 900V (minimum at VGS=0V, ID=250µA).
The continuous drain current is 7.2A at TC=25°C and 4.55A at TC=100°C.
The static drain-source on-resistance is typically 0.75Ω and maximum 0.96Ω at VGS=10V, ID=3.6A.
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-3P-3 Full Pack (TO-3PF) through-hole package with 3 pins.
The RoHS status is listed as RoHS3 Compliant, but this is unverified and has low confidence.
The gate threshold voltage ranges from 3.0V to 5.0V (minimum/maximum) at VDS=VGS, ID=250µA.