| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA9P25 is a P-Channel enhancement mode MOSFET from ON Semiconductor, designed for high voltage power switching applications. With a drain-to-source voltage rating of 250V and continuous drain current of 10.5A, it is suitable for a variety of power management circuits.
The device features a maximum on-resistance of 620mOhm at Vgs=10V and Id=5.25A, ensuring efficient conduction. The gate threshold voltage is 5V maximum at 250µA, and the gate charge is 38nC at 10V, enabling moderate switching speeds. Input capacitance is 1180pF at Vds=25V.
The MOSFET is housed in a TO-3P through-hole package (TO-3P-3, SC-65-3), providing robust thermal performance with maximum power dissipation of 150W at case temperature. Operating junction temperature range is -55°C to 150°C.
Typical applications include power supply circuits, motor drives, and DC-DC converters requiring high voltage P-Channel switching.
| Qty | Low | High |
|---|---|---|
| 450+ | $1.40 | $1.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 250V.
The device is offered in a TO-3P-3, SC-65-3 through-hole package with a supplier device package of TO-3P.
The operating junction temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 Compliant, but this is unverified.
The continuous drain current is 10.5A at case temperature.
The maximum on-resistance is 620mOhm at 5.25A drain current and 10V gate-source voltage.
The maximum gate threshold voltage is 5V at 250µA drain current.