| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
900 pcs
|
900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The FQA8N90C-F109 is an N-Channel MOSFET from ON Semiconductor designed for high-voltage switching applications. It features a drain-source voltage rating of 900V and a continuous drain current of 8A at case temperature. The device has a maximum on-resistance of 1.9Ohm at 4A and 10V gate drive, ensuring efficient power handling. With a maximum power dissipation of 240W and an operating junction temperature range of -55°C to 150°C, it is suitable for demanding environments. The MOSFET is housed in a through-hole TO-3P-3 package (also known as SC-65-3) with a supplier device package of TO-3PN, providing robust thermal performance. Typical applications include switch-mode power supplies, power factor correction, and motor control circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $4.36 | $4.36 |
| 10+ | $2.88 | $2.88 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
900V.
Through-hole TO-3P-3 (SC-65-3) with supplier device package TO-3PN.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
8A at case temperature.
1.9Ohm maximum at 4A, 10V.
5V maximum at 250µA.