Mfr Part #:

FQA8N90C

N-Channel MOSFET rated for 900V drain-source voltage and 8A continuous drain current. Features low on-resistance of 1.9Ω and low gate charge for efficient switching.

✓ Total Stock: 150 pcs

$ Price Range: $2.06

FQA8N90C Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	150 pcs On Request	150 pcs	On Request	1	On Request	On Request	11+	On Request	On Request

FQA8N90C Description

Short technical summary and product information.

The FQA8N90C is an N-Channel enhancement mode power MOSFET designed for high efficiency switch mode power supplies. It features a drain-source voltage rating of 900V and continuous drain current of 8A at Tc=25°C (5.1A at Tc=100°C). The maximum on-resistance is 1.9Ω at VGS=10V and ID=4A, with a typical value of 1.6Ω. Gate charge is typically 35nC (maximum 45nC) at VGS=10V, enabling fast switching performance.

This MOSFET is produced using Fairchild's proprietary planar stripe DMOS technology (QFET), which minimizes on-state resistance and provides superior switching performance. It is 100% avalanche tested with a single pulsed avalanche energy rating of 850mJ. The device also features improved dv/dt capability with a peak diode recovery dv/dt of 4.0 V/ns.

The FQA8N90C is housed in a through-hole TO-3P-3 (SC-65-3) package. It has a maximum power dissipation of 240W at Tc=25°C with a derating factor of 1.92 W/°C above 25°C. Thermal resistance junction-to-case is 0.52°C/W maximum. The operating junction temperature range is -55°C to 150°C.

FQA8N90C Quick Information

Product Type: N-Channel MOSFET

Series: FQA

Canonical Name: FQA8N90C N-Channel MOSFET, 900V, 8A, TO-3P

Subcategory: Single MOSFET

FQA8N90C Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FQA8N90C Estimated Pricing

Qty	Low	High
145+	$2.06	$2.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA8N90C Features

900V drain-source voltage rating.
8A continuous drain current.
Low on-resistance of 1.9 ohms.
Low gate charge for fast switching.
100% avalanche tested.

FQA8N90C Applications

Ideal for switch mode power supplies.
Used in high voltage DC-DC converters.
Suitable for power factor correction circuits.
Applicable in motor control inverters.

FQA8N90C FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the FQA8N90C?

900V maximum.

What is the continuous drain current rating?

8A at Tc=25°C, 5.1A at Tc=100°C.

What is the on-resistance of the FQA8N90C?

Maximum 1.9Ω at VGS=10V, ID=4A; typical 1.6Ω.

What is the gate charge of this MOSFET?

Maximum 45nC, typical 35nC at VGS=10V.

What is the operating temperature range?

-55°C to 150°C junction temperature.

What package does the FQA8N90C come in?

TO-3P-3 (SC-65-3) through-hole package.

Is the FQA8N90C RoHS compliant?

Listed as RoHS3 Compliant, but this is unverified and low confidence.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	8 A (Tc)
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	2080 pF @ 25 V
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs	1.9Ohm @ 4A, 10V
SVHC Present	Not Present
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	5V @ 250µA