FQA8N100C N-Channel MOSFET rated for 1000V drain-source voltage and 8A continuous drain current. Features low on-resistance of 1.45 Ohm and is RoHS compliant.
Mfr Part #:

FQA8N100C

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated for 1000V drain-source voltage and 8A continuous drain current. Features low on-resistance of 1.45 Ohm and is RoHS compliant.
✓ Total Stock: 7,140 pcs
$ Price Range: $2.67 - $6.43

FQA8N100C Available from 5 distributors

✓ Authorised
✓ Non-Authorised

FQA8N100C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

FQA8N100C Description

Short technical summary and product information.

The FQA8N100C is an N-Channel enhancement mode power MOSFET from onsemi's QFET family. It is designed for high-voltage switching applications with a drain-source voltage rating of 1000V and continuous drain current of 8A at 25°C. The device features a maximum on-resistance of 1.45 Ohm at Vgs=10V and Id=4A, ensuring efficient power conversion. With a low typical gate charge of 53 nC and low reverse transfer capacitance of 16 pF, the FQA8N100C offers superior switching performance. It is capable of handling high energy pulses in avalanche and commutation modes, with a single pulse avalanche energy rating of 850 mJ. The MOSFET is housed in a TO-3P-3 (TO-3PN) through-hole package, suitable for robust mounting. It is Pb-Free, Halide Free, and RoHS compliant, meeting environmental standards. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 225W at case temperature 25°C. These characteristics make it well suited for high-efficiency switched mode power supplies and other power conversion applications.

FQA8N100C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA8N100C N-Channel MOSFET
Subcategory: N-Channel MOSFET

FQA8N100C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

FQA8N100C Estimated Pricing

Qty Low High
1+ $6.43 $6.43
30+ $3.67 $3.67
60+ $3.35 $3.35
120+ $3.07 $3.07
510+ $2.67 $2.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA8N100C Features

  • 1000V drain-source voltage rating.
  • 8A continuous drain current capability.
  • Low on-resistance of 1.45 Ohm.
  • Low gate charge for fast switching.
  • RoHS3 compliant and Pb-Free.

FQA8N100C Applications

  • High-efficiency switched mode power supplies.
  • Power factor correction circuits.
  • High-voltage DC-DC converters.
  • Motor control and inverter systems.

FQA8N100C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

1000 V.

What is the continuous drain current?

8 A at Tc = 25°C, 5 A at Tc = 100°C.

What is the on-resistance?

1.45 Ohm maximum at Vgs = 10 V, Id = 4 A.

What package is it available in?

TO-3P-3 (TO-3PN) through-hole package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is it RoHS compliant?

Yes, RoHS3 compliant.

What is the typical gate charge?

53 nC typical at Vgs = 10 V.

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