| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQA85N06 is an N-Channel enhancement mode power MOSFET manufactured using Fairchild's proprietary planar stripe DMOS technology. This device is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes.
Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 100A at 25°C case temperature (71A at 100°C), and a maximum drain-source on-resistance of 10mOhm at VGS=10V. The gate threshold voltage ranges from 2.0V to 4.0V at ID=250µA. The device also features a low typical gate charge of 86nC and low reverse transfer capacitance of 165pF, contributing to fast switching performance.
The FQA85N06 is rated for a maximum power dissipation of 214W at 25°C case temperature and can operate over a junction temperature range of -55°C to 175°C. It is 100% avalanche tested, with a single pulsed avalanche energy rating of 815mJ and an avalanche current rating of 100A.
This MOSFET is housed in a TO-3P (TO-3PN) through-hole package, suitable for low voltage applications such as automotive systems, DC/DC converters, and high efficiency switching power management in portable and battery-operated products.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 100A at Tc=25°C and 71A at Tc=100°C.
The maximum on-resistance is 10mOhm at VGS=10V and ID=50A.
The operating junction temperature range is -55°C to 175°C.
The FQA85N06 is available in a TO-3P (TO-3PN) through-hole package.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.