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FQA7N80C N-Channel MOSFET rated at 800V and 7A, with low on-resistance of 1.9Ω. Designed for high efficiency switch mode power supplies.
Mfr Part #:

FQA7N80C

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET rated at 800V and 7A, with low on-resistance of 1.9Ω. Designed for high efficiency switch mode power supplies.
✓ Total Stock: 980 pcs
$ Price Range: $1.60

FQA7N80C Available from 1 distributor

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✓ Non-Authorised
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980 pcs
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FQA7N80C Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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FQA7N80C Description

Short technical summary and product information.

The FQA7N80C is an N-Channel enhancement mode power MOSFET using Fairchild's proprietary planar stripe DMOS technology. It features a drain-source breakdown voltage of 800V minimum and continuous drain current of 7A at case temperature 25°C. The static drain-source on-resistance is typically 1.57Ω and maximum 1.9Ω at VGS=10V, ID=3.5A.

 

The device offers low gate charge (typical 27 nC, max 35 nC) and low reverse transfer capacitance (typical 10 pF), contributing to fast switching performance. It is 100% avalanche tested with single pulsed avalanche energy rating of 580 mJ and repetitive avalanche energy of 30 mJ. The peak diode recovery dv/dt is 4.0 V/ns.

 

Packaged in a through-hole TO-3P-3 (SC-65-3) case, the FQA7N80C has a maximum power dissipation of 198W at 25°C case temperature. The operating junction temperature range is -55°C to +150°C. Thermal resistance junction-to-case is 0.63°C/W maximum.

 

This MOSFET is suitable for high efficiency switch mode power supplies where high voltage and moderate current switching is required.

FQA7N80C Quick Information

Product Type: MOSFET
Series: QFET
Canonical Name: FQA7N80C 800V N-Channel MOSFET
Subcategory: N-Channel Power MOSFET

FQA7N80C Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

FQA7N80C Estimated Pricing

Qty Low High
188+ $1.60 $1.60

Estimated market price range - modelled values for guidance only, not live distributor offers.

FQA7N80C Features

  • 800V drain-source breakdown voltage.
  • 7A continuous drain current rating.
  • Low RDS(on) of 1.9Ω maximum.
  • Low gate charge of 27 nC typical.
  • 100% avalanche tested for ruggedness.

FQA7N80C Applications

  • High efficiency switch mode power supplies.
  • Power factor correction circuits.
  • Uninterruptible power supply inverters.

FQA7N80C FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the FQA7N80C?

800 V minimum at ID=250µA, VGS=0V.

What package is the FQA7N80C available in?

TO-3P-3, SC-65-3; through hole mounting.

What is the operating temperature range of the FQA7N80C?

-55°C to 150°C junction temperature.

Is the FQA7N80C RoHS compliant?

RoHS3 Compliant (unverified, low confidence).

What is the continuous drain current rating?

7 A at TC=25°C; 4.4 A at TC=100°C.

What is the gate threshold voltage range?

3.0 V to 5.0 V at VDS=VGS, ID=250µA.

What is the maximum power dissipation?

198 W at TC=25°C, derate 1.75 W/°C above 25°C.

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