| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The FQA70N15 is an N-Channel enhancement mode power MOSFET produced using onsemi's proprietary planar stripe and DMOS technology. This advanced MOSFET technology is tailored to reduce on-state resistance and provide superior switching performance and high avalanche energy strength.
Key electrical specifications include a drain-source voltage of 150 V, continuous drain current of 70 A at 25°C (50 A at 100°C), and a maximum on-resistance of 28 mΩ at VGS = 10 V and ID = 35 A. The device features low gate charge (typical 135 nC, maximum 175 nC) and low reverse transfer capacitance (typical 135 pF). It is 100% avalanche tested with a single pulse avalanche energy rating of 1000 mJ.
The MOSFET is housed in a through-hole TO-3PN package (TO-3P-3 / SC-65-3) and is Pb-Free (lead-free) as per the datasheet. The operating junction temperature range is -55°C to 175°C. These devices are suitable for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
150 V.
TO-3PN (TO-3P-3 / SC-65-3) through-hole package.
-55°C to 175°C (junction temperature).
The datasheet states the device is Pb-Free (lead-free). RoHS3 compliance is listed but unverified.
28 mΩ maximum at VGS = 10 V and ID = 35 A.
Maximum 175 nC at VGS = 10 V; typical 135 nC.
Single pulse avalanche energy of 1000 mJ maximum under specified test conditions.